KA1M0965RTU View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

View to exact match

KA1M0965RTU

Fairchild Power Switch(FPS)

Fairchild Semiconductor 

KA1M0965R

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Static Drain-Source on Resistance (Note)

Forward Transconductance (Note)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn on Delay Time

Rise Time

Turn Off Delay Time

Fall Time

Total Gate Charge

(Gate-Source+Gate-Drain)

Gate-Source Charge

Gate-Drain (Miller) Charge

Symbol

BVDSS

IDSS

RDS(ON)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Condition

Min. Typ. Max. Unit

VGS=0V, ID=50µA

650 -

-V

VDS=Max., Rating, VGS=0V -

- 50 µA

VDS=0.8Max., Rating,

VGS=0V, TC=125°C

-

- 200 µA

VGS=10V, ID=4.5A

- 0.96 1.2 Ω

VDS=15V, ID=4.5A

5.0 -

-S

VGS=0V, VDS=25V,

f=1MHz

- 1750 -

- 190 - pF

- 78 -

VDD=0.5BVDSS, ID=9.0A

(MOSFET switching

time are essentially

independent of

operating temperature)

- 20 50

- 23 55

nS

- 85 180

- 30 70

VGS=10V, ID=9.0A,

VDS=0.5BVDSS (MOSFET

- 74 75

switching time are essentially - 12 - nC

independent of

operating temperature)

- 35.4 -

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

2. S = -1--

R

3

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