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KA1H0380 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KA1H0380
Fairchild
Fairchild Semiconductor Fairchild
KA1H0380 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
SPS
KA1H0380R
ELECTRICAL CHARACTERISTICS (SFET part)
(Ta=25°C unless otherwise specified)
Characteristic
Symbol
Test condition
Drain-source breakdown voltage
Zero gate voltage drain current
BVDSS
IDSS
Static drain-source on resistance (note) RDS(ON)
Forward transconductance (note)
gfs
Input capacitance
Ciss
Output capacitance
Coss
VGS=0V, ID=50µA
VDS=Max., Rating, VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=1.5A
VDS=15V, ID=1.5A
VGS=0V, VDS=25V,
f=1MHz
Reverse transfer capacitance
Crss
Turn on delay time
Rise time
Turn off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=0.5BVDSS, ID=3.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
Qg
VGS=10V, ID=3.0A,
VDS=0.5BVDSS (MOSFET
Qgs
switching time are
essentially independent of
Qgd
operating temperature)
NOTE: Pulse test: Pulse width 300µS, duty cycle 2%
Min.
800
1.5
Typ.
4.0
2.5
779
75.6
24.9
40
95
150
60
7.2
12.1
Max.
50
200
5.0
34
Unit
V
µA
µA
mho
pF
nS
nC
3
 

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