datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

KA1H0280RB View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KA1H0280RB
Fairchild
Fairchild Semiconductor Fairchild
KA1H0280RB Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
KA1M0280RB/KA1H0280RB
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Zero Gate Voltage Drain Current
IDSS
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Note:
1. Pulse test: Pulse width 300µS, duty cycle 2%
2. S = -1--
R
Condition
VGS=0V, ID=50µA
VDS=Max., Rating,
VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=1.0A
VDS=50V, ID=1.0A
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=2.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=2.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
Min. Typ. Max. Unit
800 -
-
V
-
- 50 µA
-
- 200 µA
- 5.6 7.0
1.5 2.5 -
S
- 250 -
- 52 - pF
- 25 -
- 21 -
- 28 -
nS
- 77 -
- 24 -
-
- 60
-
15
-
nC
- 20 -
3
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]