K9F2G08R0A View Datasheet(PDF) - Samsung

Part Name

Description

View to exact match

K9F2G08R0A

256M x 8 Bit NAND Flash Memory

Samsung 

K9F2G08R0A

K9F2G08U0A

FLASH MEMORY

READY/BUSY

The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random

read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-

ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is

an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and

current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig.20). Its value can be

determined by the following guidance.

VCC

GND

Rp ibusy

R/B

open drain output

CL

Ready Vcc

1.8V device - VOL : 0.1V, VOH : VCC-0.1V

3.3V device - VOL : 0.4V, VOH : 2.4V

VOH

VOL

Busy

tf

tr

Device

Figure 19. Rp vs tr ,tf & Rp vs ibusy

@ Vcc = 1.8V, Ta = 25°C , CL = 30pF

300n

200n

100n

tr,tf [s]

Ibusy 1.70

0.85

30 tr 60

1.70 tf

1.70

90

0.57

1.70

1K

2K

3K

Rp(ohm)

120

0.43

1.70

4K

Ibusy [A]

3m 300n

2m 200n

1m 100n

tr,tf [s]

@ Vcc = 3.3V, Ta = 25°C , CL = 50pF

2.4

Ibusy

1.2

200

150

100

tr

50

1.8 tf

1.8

0.8

0.6

1.8

1.8

Ibusy [A]

3m

2m

1m

1K

2K

3K

4K

Rp(ohm)

Rp value guidance

VCC(Max.) - VOL(Max.)

Rp(min, 1.8V part) =

=

IOL + ΣIL

1.85V

3mA + ΣIL

VCC(Max.) - VOL(Max.)

Rp(min, 3.3V part) =

=

IOL + ΣIL

3.2V

8mA + ΣIL

where IL is the sum of the input currents of all devices tied to the R/B pin.

Rp(max) is determined by maximum permissible limit of tr

43

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