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KM416L8031BT-GL0 View Datasheet(PDF) - Samsung

Part NameDescriptionManufacturer
KM416L8031BT-GL0 128Mb DDR SDRAM Samsung
Samsung Samsung
KM416L8031BT-GL0 Datasheet PDF : 53 Pages
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128Mb DDR SDRAM
Current State CS RAS CAS WE
Address
Command
Action
WRITE
L H H LX
Burst Stop
ILLEGAL
L H L H BA, CA, A10
READ/READA
Terminate Burst With DM=High,
Latch CA, Begin Read, Deter-
mine Auto-Precharge*3
L H L L BA, CA, A10
Terminate Burst, Latch CA,
WRITE/WRITEA Begin new Write, Determine
Auto-Precharge*3
L L H H BA, RA
Active
Bank Active/ILLEGAL*2
L L H L BA, A10
L L L HX
PRE/PREA
Refresh
Terminate Burst With DM=High,
Precharge
ILLEGAL
L L L L Op-Code, Mode-Add MRS
ILLEGAL
READ with
L H H LX
AUTO
PRECHARGE*6
L
H
L
H BA, CA, A10
(READA)
L H L L BA, CA, A10
L L H H BA, RA
Burst Stop
ILLEGAL
READ/READA *6
WRITE/WRITEA ILLEGAL
Active
*6
L L H L BA, A10
L L L HX
PRE/PREA
Refresh
*6
ILLEGAL
L L L L Op-Code, Mode-Add MRS
ILLEGAL
WRITE with L H H L X
AUTO
L H L H BA, CA, A10
RECHARGE*7
(WRITEA)
L H L L BA, CA, A10
L L H H BA, RA
Burst Stop
ILLEGAL
READ/READA *7
WRITE/WRITEA *7
Active
*7
L L H L BA, A10
PRE/PREA
*7
L L L HX
Refresh
L L L L Op-Code, Mode-Add MRS
Table 9-2. Functional truth table
ILLEGAL
ILLEGAL
- 35 -
REV. 1.0 November. 2. 2000
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