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KM416L8031BT-GL0 View Datasheet(PDF) - Samsung

Part NameDescriptionManufacturer
KM416L8031BT-GL0 128Mb DDR SDRAM Samsung
Samsung Samsung
KM416L8031BT-GL0 Datasheet PDF : 53 Pages
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128Mb DDR SDRAM
3.3.2 Burst Write Operation
The Burst Write command is issued by having CS, CAS, and WE low while holding RAS high at the rising
edge of the clock(CK). The address inputs determine the starting column address. There is no write latency
relative to DQS required for burst write cycle. The first data of a burst write cycle must be applied on the DQ
pins tDS(Data-in setup time) prior to data strobe edge enabled after tDQSS from the rising edge of the
clock(CK) that the write command is issued. The remaining data inputs must be supplied on each subsequent
falling and rising edge of Data Strobe until the burst length is completed. When the burst has been finished, any
additional data supplied to the DQ pins will be ignored.
< Burst Length=4 >
0
CK
CK
Command NOP
DQS
DQ s
1 *1
2
3
4
5
6
WRITEA
NOP
WRITEB
NOP
NOP
NOP
tDQSSmax
tWPRES*1
*1
Din 0 Din 1 Din 2 Din 3 Din 0 Din 1 Din 2 Din 3
7
NOP
8
NOP
Figure 10. Burst write operation timing
1. The specific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown
(DQS going from High_Z to logic Low) applies when no writes were previously in progress on the bus.
If a previous write was in progress, DQS could be High at this time, depending on tDQSS.
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REV. 1.0 November. 2. 2000
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