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KM416L8031BT-GL0 View Datasheet(PDF) - Samsung

Part NameDescriptionManufacturer
KM416L8031BT-GL0 128Mb DDR SDRAM Samsung
Samsung Samsung
KM416L8031BT-GL0 Datasheet PDF : 53 Pages
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128Mb DDR SDRAM
3.2.3 Precharge
The precharge command is used to precharge or close a bank that has been activated. The precharge com-
mand is issued when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The precharge
command can be used to precharge each bank respectively or all banks simultaneously. The bank select
addresses(BA0, BA1) are used to define which bank is precharged when the command is initiated. For write
cycle, tWR(min.) must be satisfied until the precharge command can be issued. After tRP from the precharge,
an active command to the same bank can be initiated.
Bank Selection for Precharge by Bank address bits
A10/AP
BA1
BA0
Precharge
0
0
0
Bank A Only
0
0
1
Bank B Only
0
1
0
Bank C Only
0
1
1
Bank D Only
1
X
X
All Banks
Table 5. Bank selection for precharge by Bank address bits
3.2.4 No Operation(NOP) & Device Deselect
The device should be deselected by deactivating the CS signal. In this mode DDR SDRAM should ignore
all the control inputs. The DDR SDRAMs are put in NOP mode when CS is active and by deactivating RAS,
CAS and WE. For both Deselect and NOP the device should finish the current operation when this com-
mand is issued.
- 18 -
REV. 1.0 November. 2. 2000
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