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K3012PG View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
K3012PG
Vishay
Vishay Semiconductors Vishay
K3012PG Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
IF = 50 mA
VR = 0, f = 1 MHz
Symbol
VF
Cj
K3010P(G) Series
Vishay Telefunken
Min.
Typ.
Max.
Unit
1.25
1.6
V
50
pF
Output (Detector)
Parameter
Test Conditions
Forward peak off-state
voltage (repetitive)
IDRM = 100 nA
Peak on-state voltage
Critical rate of rise of
off-state voltage
ITM = 100 mA
IFT = 0, IFT = 30 mA
1) Test voltage must be applied within dv/dt ratings
Symbol Min.
Typ.
Max.
Unit
VDRM 1)
250
V
VTM
1.5
(dv/dt)cr
10
(dv/dt)crq 0.1
0.2
3
V
V/ms
V/ms
Coupler
Parameter
Test Conditions
Type Symbol Min.
W Emitting diode trigger VS = 3 V, RL = 150 K3010P(G) IFT
current
K3011P(G) IFT
K3012P(G) IFT
Holding current
IF = 10 mA, VS 3 V
IH
Note: IFT is defined as a minimum trigger current
Typ. Max. Unit
8
15
mA
5
10
mA
2
5
mA
100
mA
RS
Test condition:
dv/dtcr
VS = 2/3 VDRM
(Sine wave)
V~
RL = 33 k
IFT
dv/dtcrq
RL
Veff = 30 V
(Sine wave)
RL = 2 k
95 10813
Figure 1. Test circuit for dv/dtcr and dv/dtcrp
Document Number 83504
Rev. A4, 13–Sep–99
www.vishay.de FaxBack +1-408-970-5600
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