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J112G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
View to exact match
J112G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
J112G Datasheet PDF : 0 Pages
J111, J112
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = −1.0 mAdc)
Gate Reverse Current
(VGS = −15 Vdc)
Gate Source Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0 mAdc)
J111
J112
Drain−Cutoff Current
(VDS = 5.0 Vdc, VGS = −10 Vdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current(1)
(VDS = 15 Vdc)
J111
J112
Symbol
V(BR)GSS
IGSS
VGS(off)
ID(off)
IDSS
Static Drain−Source On Resistance
(VDS = 0.1 Vdc)
Drain Gate and Source Gate On−Capacitance
(VDS = VGS = 0, f = 1.0 MHz)
Drain Gate Off−Capacitance
(VGS = −10 Vdc, f = 1.0 MHz)
Source Gate Off−Capacitance
(VGS = −10 Vdc, f = 1.0 MHz)
1. Pulse Width = 300 ms, Duty Cycle = 3.0%.
J111
J112
rDS(on)
Cdg(on)
+
Csg(on)
Cdg(off)
Csg(off)
Min
35
− 3.0
− 1.0
20
5.0
2.0
Max
− 1.0
− 10
− 5.0
1.0
30
50
28
5.0
5.0
Unit
Vdc
nAdc
Vdc
nAdc
mAdc
W
pF
pF
pF
ORDERING INFORMATION
Device
Package
Shipping
J111RL1
J111RL1G
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Reel
J111RLRA
J111RLRAG
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Reel
J111RLRP
J111RLRPG
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Reel
J112
J112G
TO−92
TO−92
(Pb−Free)
1000 Units / Bulk
J112RL1
J112RL1G
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Reel
J112RLRA
J112RLRAG
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
 

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