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ISL8510IRZ View Datasheet(PDF) - Intersil

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ISL8510IRZ Datasheet PDF : 21 Pages
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ISL8510
Electrical Specifications
Unless Otherwise Noted, Typical Specifications are Measured at the Following Conditions: TA = +25°C,
VIN = 6V to 25V. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified.
Temperature limits established by characterization and are not production tested. (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
ENABLE SECTION
EN_PWM Threshold
Rising Edge
1.2 1.7 2.2
V
Hysteresis
350
mV
EN_LDO Logic Input Threshold
Rising Edge
1.2 1.7 2.2
V
Hysteresis
400
mV
EN_LDO Logic Input Current
-1
1
µA
FAULT PROTECTION
Thermal Shutdown Temperature
PWM UV Trip Level
PWM UVP Propagation Delay
TSD
THYS
VUV
Rising Threshold
Hysteresis
Referred to Nominal VOUT
150
°C
15
°C
65
70
75
%
360
ns
PWM OCP Threshold
(Note 5)
1.85 2.70 3.00
A
OCP Blanking Time
150
ns
POWER-GOOD
PG_PWM Trip Level Referred to Nominal
VOUT
Falling Edge, 15mV Hysteresis
Rising Edge, 15mV Hysteresis
84
88
92
%
107 110 113
%
PG_PWM and PG_LDO Propagation Delay
160
ns
PG_PWM Low Voltage
ISINK = 4mA
0.3
V
PG_PWM Leakage Current
PG_LDO Trip Level Referred to Nominal
VOUT
VPG_PWM = 5.5V, VFB_PWM = 0.6V
Lower Level, Falling Edge, 15mV Hysteresis
-1
1
µA
81
85
88
%
PG_LDO Low Voltage
ISINK = 4mA
0.3
V
PG_LDO Leakage Current
SOFT-START SECTION
VPG_LDO = 5V, VFB_LDO = 600mV
-1
1
µA
Soft-Start Threshold
0.8 1.0 1.2
V
Soft-Start Threshold to Enable PG
2.8 2.95 3.1
V
Soft-Start Voltage High
3.3
V
Soft-Start Charging Current
25
30
35
µA
Soft-Start Pull-down
POWER MOSFET
VSS = 3.0V
25
mA
rDS(ON)
LDO
IOUT = 100mA
120 350 mΩ
FB_LDO Voltage Accuracy
FB Leakage Current
Output Current Limit
IOUT = 10mA
VFB = 0V
-1.5
1.5
%
-200 -80
nA
550 800 1000 mA
Dropout Voltage
IOUT = 450mA, VOUT >2V (Note 6)
150 300 mV
FB_LDO Line Regulation
IOUT = 0mA, VIN_LDO = 2.0V ~ 4.6V
-0.6
0.6 %/V
FB_LDO Load Regulation
IOUT = 10mA to 500mA
±0.5
%
NOTES:
4. Test Condition: VIN = 15V, FB forced above regulation point (0.6V), no switching, and power MOSFET gate charging current not included.
5. Limits established by characterization and are not production tested.
6. The dropout voltage is defined as minimum amount VIN must exceed a desired VOUT operating point. VLDO = VIN_LDO - VOUT.
7. The input voltage VCC must be higher than VIN_LDO or the LDO will not function.
7
FN6516.2
December 15, 2008
 

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