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ISL8025IRTAJZ-T View Datasheet(PDF) - Intersil

Part Name
Description
View to exact match
ISL8025IRTAJZ-T
Intersil
Intersil Intersil
ISL8025IRTAJZ-T Datasheet PDF : 21 Pages
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ISL8025, ISL8025A
Electrical Specifications Unless otherwise noted, all parameter limits are established over the recommended operating conditions and
the typical specification are measured at the following conditions: TA = -40°C to +85°C, VIN = 3.6V, EN = VIN, unless otherwise noted. Typical values are
at TA = +25°C. Boldface limits apply over the operating temperature range, -40°C to +85°C. (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
(Note 8) TYP (Note 8) UNITS
Negative Current Limit
COMPENSATION
INLIMIT
-4.5
-3
-1.5
A
Error Amplifier Trans-Conductance
Trans-Resistance
FSW = VIN
FSW with resistor
RT 5A application (test at 3.6V)
0.155
60
120
0.175
0.195
µA/V
µA/V
PHASE
P-Channel MOSFET ON-Resistance
N-Channel MOSFET ON-Resistance
PHASE Maximum Duty Cycle
VIN = 5V, IO = 200mA
VIN = 2.7V, IO = 200mA
VIN = 5V, IO = 200mA
VIN = 2.7V, IO = 200mA
45
55
m
70
90
m
19
25
m
28
37
m
100
%
PHASE Minimum On-Time
SYNC = High
140
ns
OSCILLATOR
Nominal Switching Frequency
SYNC Logic Low-to-High Transition Range
FSW FSW = VIN, ISL8025
FSW = VIN, ISL8025A
FSW with RS = 402k
FSW with RS = 42.2k
800 1000 1200 kHz
1600 2000 2400 kHz
490
kHz
4200
kHz
0.70 0.75 0.80
V
SYNC Hysteresis
0.15
V
SYNC Logic Input Leakage Current
PG
VIN = 3.6V
3.6
5
µA
Output Low Voltage
0.3
V
Delay Time (Rising Edge)
PG Pin Leakage Current
OVP PG Rising Threshold
Time from VOUT reached regulation
PG = VIN
0.5
1
2
ms
0.01
0.1
µA
0.80
V
UVP PG Rising Threshold
0.48 0.51 0.54
V
UVP PG Hysteresis
30
mV
PGOOD Delay Time (Falling Edge)
7.5
µs
EN
Logic Input Low
0.4
V
Logic Input High
0.9
V
EN Logic Input Leakage Current
Pulled up to 5.5V
0.1
1
µA
Thermal Shutdown
Temperature Rising
150
°C
Thermal Shutdown Hysteresis
Temperature Falling
25
°C
NOTE:
8. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
7
FN8357.0
February 20, 2013
 

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