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ISL71090SEHVF12 View Datasheet(PDF) - Intersil

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Description
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ISL71090SEHVF12 Datasheet PDF : 10 Pages
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Radiation Hardened Ultra Low Noise, Precision Voltage
Reference
ISL71090SEH12
The ISL71090SEH12 is an ultra low noise, high DC accuracy
precision voltage reference with a wide input voltage range
from 4V to 30V. The ISL71090SEH12 uses the Intersil
Advanced Bipolar technology to achieve sub 2µVP-P noise at
0.1Hz with an accuracy over temperature and radiation of
0.15%.
The ISL71090SEH12 offers a 1.25V output voltage with
10ppm/°C temperature coefficient and also provides
excellent line and load regulation. The device is offered in an
8 Ld Flatpack package.
The ISL71090SEH12 is ideal for high-end instrumentation,
data acquisition and applications requiring high DC precision
where low noise performance is critical.
Applications
• RH voltage regulators precision outputs
• Precision voltage sources for data acquisition system for
space applications
• Strain and pressure gauge for space applications
Features
• Reference output voltage . . . . . . . . . . . . . . . . . 1.25V ±0.05%
• Accuracy over temperature and radiation . . . . . . . . . .±0.15%
• Output voltage noise . . . . . . . . . . 1µVP-P Typ (0.1Hz to 10Hz)
• Supply current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 930µA (Typ)
• Tempco (box method) . . . . . . . . . . . . . . . . . . . 10ppm/°C Max
• Output current capability . . . . . . . . . . . . . . . . . . . . . . . . 20mA
• Line regulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8ppm/V
• Load regulation . . . . . . . . . . . . . . . . . . . . . . . . . . . 35ppm/mA
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- High dose rate (50-300rad(Si)/s) . . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 100krad(Si)*
- SET/SEL/SEB . . . . . . . . . . . . . . . . . . . . . . . . 86MeVcm2/mg
*Product capability established by initial characterization. The
“EH” version is acceptance tested on a wafer by wafer basis to
50krad(Si) at low dose rate
• Electrically screened to SMD 5962-13211
Related Literature
• AN1862, “ISL71090SEH12 Evaluation Board User’s Guide”
• AN1863, “SEE Testing of the ISL71090SEH12”
• AN1864, “Radiation Report of the ISL71090SEH12”
ISL71090SEH12
1
DNC
8
DNC
2
7
VIN
VIN
DNC
VREF
0.1µF
3
6
COMP VOUT
4
5
1µF
GND
TRIM
C
REFIN DACOUT
VDD
VDD
D12
VEE
VEE
D0
1.1k
NOTE: Select C to minimize
settling time.
BIPOFF
GND
HS-565BRH
FIGURE 1. ISL71090SEH12 TYPICAL APPLICATION DIAGRAM
1.2530
1.2525
1.2520
1.2515
UNIT3
UNIT5
UNIT1
UNIT2
1.2510
1.2505
UNIT4
1.2500
-60 -40 -20
0 20 40 60 80 100 120
TEMPERATURE (°C)
FIGURE 2. VOUT vs TEMPERATURE
June 26, 2013
1
FN8452.0
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2013. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
 

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