ISL6255HRZ View Datasheet(PDF) - Intersil
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Description
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ISL6255HRZ Datasheet PDF : 22 Pages
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ISL6255, ISL6255A
Absolute Maximum Ratings
DCIN, CSIP, CSON to GND. . . . . . . . . . . . . . . . . . . . . -0.3V to +28V
CSIP-CSIN, CSOP-CSON . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
CSIP-SGATE, CSIP-BGATE . . . . . . . . . . . . . . . . . . . . . -0.3V to 16V
PHASE to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -7V to 30V
BOOT to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +35V
BOOT to VDDP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2V to 28V
ACLIM, ACPRN, CHLIM, DCPRN, VDD to GND. . . . . . . -0.3V to 7V
BOOT-PHASE, VDDP-PGND . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
ACSET and DCSET to GND (Note 3) . . . . . . . . -0.3V to VDD+0.3V
ICM, ICOMP, VCOMP to GND. . . . . . . . . . . . . . -0.3V to VDD+0.3V
VREF, CELLS to GND . . . . . . . . . . . . . . . . . . . . -0.3V to VDD+0.3V
EN, VADJ, PGND to GND . . . . . . . . . . . . . . . . . -0.3V to VDD+0.3V
UGATE. . . . . . . . . . . . . . . . . . . . . . . . . PHASE-0.3V to BOOT+0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . PGND-0.3V to VDDP+0.3V
Thermal Information
Thermal Resistance
θJA (°C/W) θJC (°C/W)
QFN Package (Notes 4, 5). . . . . . . . . .
39
9.5
QSOP Package (Note 4) . . . . . . . . . . .
80
NA
Junction Temperature Range. . . . . . . . . . . . . . . . . .-10°C to +150°C
Operating Temperature Range . . . . . . . . . . . . . . . .-10°C to +100°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Lead Temperature (soldering, 10s) . . . . . . . . . . . . . . . . . . . . +300°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
3. When the voltage across ACSET and DCSET is below 0V, the current through ACSET and DCSET should be limited to less than 1mA.
4. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
5. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
DCIN = CSIP = CSIN = 18V, CSOP = CSON = 12V, ACSET = DCSET = 1.5V, ACLIM = VREF,
VADJ = Floating, EN = VDD = 5V, BOOT-PHASE = 5.0V, GND = PGND = 0V, CVDD = 1µF, IVDD = 0mA,
TA = -10°C to +100°C, TJ ≤ 125°C, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SUPPLY AND BIAS REGULATOR
DCIN Input Voltage Range
7
25
V
DCIN Quiescent Current
EN = VDD or GND, 7V ≤ DCIN ≤ 25V
1.4
3
mA
Battery Leakage Current (Note 6)
DCIN = 0, no load
3
10
µA
VDD Output Voltage/Regulation
VDD Undervoltage Lockout Trip Point
7V ≤ DCIN ≤ 25V, 0 ≤ IVDD ≤ 30mA
VDD Rising
4.925
5.075
5.225
V
4.0
4.4
4.6
V
Hysteresis
200
250
400
mV
Reference Output Voltage VREF
Battery Charge Voltage Accuracy
0 ≤ IVREF ≤ 300µA
2.365
2.39
2.415
V
CSON = 16.8V, CELLS = VDD, VADJ = Float
-0.5
0.5
%
CSON = 12.6V, CELLS = GND, VADJ = Float
-0.5
0.5
%
CSON = 8.4V, CELLS = Float, VADJ = Float
-0.5
0.5
%
CSON = 17.64V, CELLS = VDD, VADJ = VREF
-0.5
0.5
%
CSON = 13.23V, CELLS = GND, VADJ = VREF
-0.5
0.5
%
CSON = 8.82V, CELLS = Float, VADJ = VREF
-0.5
0.5
%
CSON = 15.96V, CELLS = VDD, VADJ = GND
-0.5
0.5
%
CSON = 11.97V, CELLS = GND, VADJ = GND
-0.5
0.5
%
CSON = 7.98V, CELLS = Float, VADJ = GND
-0.5
0.5
%
TRIP POINTS
ACSET Threshold
1.24
1.26
1.28
V
ACSET Input Bias Current Hysteresis
2.2
3.4
4.4
µA
ACSET Input Bias Current
ACSET ≥ 1.26V
2.2
3.4
4.4
µA
ACSET Input Bias Current
ACSET < 1.26V
-1
0
1
µA
DCSET Threshold
1.24
1.26
1.28
V
3
FN9203.2
May 23, 2006
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