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IS24C128B View Datasheet(PDF) - Integrated Silicon Solution

Part Name
Description
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IS24C128B
ISSI
Integrated Silicon Solution ISSI
IS24C128B Datasheet PDF : 17 Pages
First Prev 11 12 13 14 15 16 17
IS24C128B
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
Vs
Vp
Tbias
Tstg
Supply Voltage
Voltage on Any Pin
Temperature Under Bias
Storage Temperature
–0.5 to +6.5
V
–0.5 to Vcc +0.5 V
–55 to +125
°C
–65 to +150
°C
Iout
Output Current
5
mA
Notes:
1.  Stresses violating the conditions listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only. Functional operation
of the device outside these conditions or those indicated in the operational sections of this
specification is not implied. Exposure to these conditions for extended periods may affect
reliability.
DC ELECTRICAL CHARACTERISTICS
Industrial (Ta = -40oC to +85oC)
Symbol
Vol1
Vol2
Vih
Vil
Ili
Ilo
Parameter
Test Conditions
Output Low Voltage
Vcc = 1.8V, Iol = 0.15 mA
Output Low Voltage
Vcc = 2.5V, Iol = 2.1 mA
Input High Voltage
Input Low Voltage
Input Leakage Current
Vin = Vcc max.
Output Leakage Current
Notes:  Vil min and Vih max are reference only and are not tested
Min.
Vcc x 0.7
–0.3
Max.
0.2
0.4
Vcc + 0.5
Vcc x 0.3
3
3
Unit
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS
Industrial (Ta = -40oC to +85oC)
Symbol Parameter
Icc1
Operating Current
Icc2
Operating Current
Isb1
Standby Current
Isb2
Standby Current
Isb3
Standby Current
Test Conditions
Read at 400 KHz (Vcc = 1.8V)
Write at 400 KHz (Vcc = 1.8V)
Vcc = 1.8V
Vcc = 2.5V
Vcc = 5.0V
Min.
Max.
Unit
3.0
mA
3.0
mA
15
µA
20
µA
25
µA
CAPACITANCE(1,2)
Symbol
Cin
Cout
Parameter
Input Capacitance
Output Capacitance
Conditions
Vin = 0V
Vout = 0V
Max.
6
8
Notes:
1.  Tested initially and after any design or process changes that may affect these parameters.
2.  Test conditions: Ta = 25°C, f = 1 MHz, Vcc = 5.0V.
Unit
pF
pF
12
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  00F
09/18/09
 

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