MT4C4M4E8 View Datasheet(PDF) - Micron Technology

Part Name

Description

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MT4C4M4E8

4 MEG x 4 EDO DRAM

Micron Technology 

TECHNOLOGY, INC.

4 MEG x 4

EDO DRAM

ABSOLUTE MAXIMUM RATINGS*

Voltage on VCC Pin Relative to VSS:

3.3V ................................................................ -1V to +4.6V

5V ...................................................................... -1V to +7V

Voltage on NC, Inputs or I/O Pins Relative to VSS:

3.3V ................................................................ -1V to +5.5V

5V ...................................................................... -1V to +7V

Operating Temperature, TA (ambient) .......... 0°C to +70°C

Storage Temperature (plastic) .................... -55°C to +150°C

Power Dissipation ............................................................. 1W

Short Circuit Output Current ..................................... 50mA

*Stresses greater than those listed under “Absolute Maxi-

mum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the

device at these or any other conditions above those indi-

cated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions

for extended periods may affect reliability.

DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS

(Notes: 1)

PARAMETER/CONDITION

Supply Voltage

Input High Voltage:

Valid Logic 1; all inputs, I/Os and any NC

Input Low Voltage:

Valid Logic 0; all inputs, I/Os and any NC

Input Leakage Current:

Any input at VIN (0V ≤ VIN ≤ VIH [MAX]);

all other pins not under test = 0V

Output High Voltage:

IOUT = -2mA (3.3V), -5mA (5V)

Output Low Voltage:

IOUT = 2mA (3.3V), 4.2mA (5V)

Output Leakage Current:

Any output at VOUT (0V ≤ VOUT ≤ 5.5V);

DQ is disabled and in High-Z state

SYMBOL

VCC

3.3V

MIN MAX

3.0

3.6

VIH

2.0

5.5

VIL

-1.0

0.8

II

-2

2

5V

MIN MAX

4.5 5.5

UNITS NOTES

V

2.4 VCC +1 V

-0.5 0.8

V

-2

2

µA

4

VOH

2.4

VOL

-

IOZ

-5

-

2.4

-

V

0.4

-

0.4

V

5

-5

5

µA

4 Meg x 4 EDO DRAM

D47.pm5 – Rev. 3/97

6

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©1997, Micron Technology, Inc.

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