IRLML2502TR View Datasheet(PDF) - International Rectifier
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Description
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IRLML2502TR Datasheet PDF : 9 Pages
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IRLML2502
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
20 ––– ––– V
––– 0.01 ––– V/°C
––– 0.035 0.045
––– 0.050 0.080 Ω
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 4.2A
VGS = 2.5V, ID = 3.6A
VGS(th)
Gate Threshold Voltage
0.60 ––– 1.2 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
5.8 ––– ––– S VDS = 10V, ID = 4.0A
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -12V
––– ––– 100
VGS = 12V
Qg
Total Gate Charge
––– 8.0 12
ID = 4.0A
Qgs
Qgd
td(on)
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 1.8 2.7 nC VDS = 10V
––– 1.7 2.6
VGS = 5.0V
––– 7.5 –––
VDD = 10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 10 ––– ns ID = 1.0A
––– 54 –––
RG = 6Ω
––– 26 –––
RD = 10Ω
Ciss
Input Capacitance
––– 740 –––
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 90 ––– pF VDS = 15V
––– 66 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
1.3
showing the
A
integral reverse
G
33
p-n junction diode.
S
––– ––– 1.2 V TJ = 25°C, IS = 1.3A, VGS = 0V
––– 16 24
––– 8.6 13
ns TJ = 25°C, IF = 1.3A
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
2
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