IRL2203NS View Datasheet(PDF) - Unspecified
Part Name
Description
View to exact match
IRL2203NS Datasheet PDF : 8 Pages
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IRL2203NS/L
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
l 100% RG Tested
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 7.0mΩ
ID = 116A
S
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2203NL) is available for low-profile applications.
D2Pak
IRL2203NS
TO-262
IRL2203NL
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TC = 25°C Power Dissipation
VGS
IAR
EAR
dv/dt
Linear Derating Factor
à Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Max
116
82
400
3.8
180
1.2
± 16
60
18
5.0
-55 to + 175
300 (1.6mm from case)
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Symbol
RθJC
RθJA
k Parameter
Junction-to-Case
jk Junction-to-Ambient (PCB mount, steady state)
Typ
–––
–––
Max
0.85
40
Units
°C/W
1 / 10
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