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IRL520 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRL520
Vishay
Vishay Semiconductors Vishay
IRL520 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRL520, SiHL520
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greasd Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
2.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 10 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 5.0 V
ID = 5.5 Ab
VGS = 4.0 V
ID = 4.6 Ab
VDS = 50 V, ID = 5.5 A
100
-
-
V
-
0.12
-
V/°C
1.0
-
2.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.27
Ω
-
-
0.38
3.2
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
490
-
-
150
-
pF
-
30
-
-
VGS = 5.0 V
ID = 9.2 A, VDS = 80 V,
see fig. 6 and 13b
-
-
-
12
-
3.0
nC
-
7.1
-
9.8
-
VDD = 50 V, ID = 9.2 A,
RG = 9.0 Ω, RD = 5.2 Ω, see fig. 10b
-
64
-
ns
-
21
-
-
27
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
4.5
-
nH
-
7.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
9.2
A
-
-
36
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
TJ = 25 °C, IS = 9.2 A, VGS = 0 Vb
-
-
2.5
V
trr
-
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µsb
130
190
ns
Qrr
-
0.83 1.0
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91298
S-Pending-Rev. A, 21-Jul-08
 

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