IRL510L View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

View to exact match

IRL510L

Power MOSFET

Vishay Semiconductors 

IRL510, SiHL510

Vishay Siliconix

VDS

Vary tp to obtain

required IAS

RG

5.0 V

tp

L

D.U.T.

IAS

0.01 Ω

+

- V DD

Fig. 12a - Unclamped Inductive Test Circuit

VDS

VDS

tp

VDD

IAS

Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

5.0 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

www.vishay.com

6

Document Number: 91297

S-Pending-Rev. A, 31-Jan-08

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