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IRL3715ZCL View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRL3715ZCL
IR
International Rectifier IR
IRL3715ZCL Datasheet PDF : 12 Pages
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IRL3715ZCS/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
20
–––
–––
–––
1.65
–––
–––
–––
0.014
9.2
12.4
2.1
-5.2
–––
–––
–––
11
15.5
2.55
–––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
e mVGS = 10V, ID = 15A
e VGS = 4.5V, ID = 12A
V VDS = VGS, ID = 250µA
mV/°C
1.0 µA VDS = 16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
31 ––– –––
––– 7.0 11
S VDS = 10V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 2.1 –––
VDS = 10V
––– 0.9 ––– nC VGS = 4.5V
––– 2.3 –––
ID = 12A
––– 1.7 –––
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
––– 3.2 –––
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 3.7 ––– nC VDS = 10V, VGS = 0V
––– 7.1 –––
e VDD = 10V, VGS = 4.5V
––– 44 –––
ID = 12A
––– 11 ––– ns Clamped Inductive Load
tf
Fall Time
––– 4.6 –––
Ciss
Input Capacitance
––– 870 –––
VGS = 0V
Coss
Output Capacitance
––– 270 ––– pF VDS = 10V
Crss
Reverse Transfer Capacitance
––– 140 –––
ƒ = 1.0MHz
Avalanche Characteristics
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
44
12
4.5
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
g Min. Typ. Max. Units
Conditions
––– ––– 50
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
A showing the
––– ––– 200
integral reverse
G
––– ––– 1.0
p-n junction diode.
S
e V TJ = 25°C, IS = 12A, VGS = 0V
––– 9.1
––– 2.2
14
3.3
e ns TJ = 25°C, IF = 12A, VDD = 10V
nC di/dt = 100A/µs
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