IRL3715L View Datasheet(PDF) - International Rectifier

Part Name

Description

View to exact match

IRL3715L

HEXFET® Power MOSFET

International Rectifier 

IRL3715/S/L

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

20

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––

RDS(on)

–––

Static Drain-to-Source On-Resistance –––

VGS(th)

Gate Threshold Voltage

1.0

–––

IDSS

Drain-to-Source Leakage Current

–––

IGSS

Gate-to-Source Forward Leakage

–––

Gate-to-Source Reverse Leakage

–––

––– –––

0.022 –––

11 14

15 20

––– 3.0

––– 20

––– 100

––– 200

––– -200

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

mΩ

VGS = 10V, ID = 26A ƒ

VGS = 4.5V, ID = 21A ƒ

V VDS = VGS, ID = 250µA

µA VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125°C

nA VGS = 16V

VGS = -16V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Forward Transconductance

26 ––– ––– S VDS = 10V, ID = 21A

Qg

Total Gate Charge

––– 11 17

ID = 21A

Qgs

Gate-to-Source Charge

––– 3.8 ––– nC VDS = 10V

Qgd

Gate-to-Drain ("Miller") Charge

––– 4.4 –––

VGS = 4.5V

Qoss

Output Gate Charge

––– 11 17

VGS = 0V, VDS = 10V

td(on)

Turn-On Delay Time

––– 6.4 –––

VDD = 10V

tr

td(off)

tf

Rise Time

Turn-Off Delay Time

Fall Time

––– 73 ––– ns ID = 21A

––– 12 –––

RG = 1.8Ω

––– 5.1 –––

VGS = 4.5V ƒ

Ciss

Input Capacitance

––– 1060 –––

VGS = 0V

Coss

Output Capacitance

––– 700 –––

VDS = 10V

Crss

Reverse Transfer Capacitance

––– 120 ––– pF ƒ = 1.0MHz

Avalanche Characteristics

Symbol

EAS

IAR

Parameter

Single Pulse Avalanche Energy‚

Avalanche Current

Typ.

–––

–––

Max.

110

21

Units

mJ

A

Diode Characteristics

Symbol

IS

ISM

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

Min.

–––

–––

–––

–––

–––

–––

–––

–––

Typ. Max. Units

––– 54†

A

––– 210

0.9 1.3 V

0.8 –––

37 56 ns

28 42 nC

38 57 ns

30 45 nC

Conditions

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

TJ = 25°C, IS = 21A, VGS = 0V ƒ

TJ = 125°C, IS = 21A, VGS = 0V ƒ

TJ = 25°C, IF = 21A, VR=20V

di/dt = 100A/µs ƒ

TJ = 125°C, IF = 21A, VR=20V

di/dt = 100A/µs ƒ

www.irf.com

Share Link: