datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

IRL3705NS/L View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRL3705NS/L
IR
International Rectifier IR
IRL3705NS/L Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IRL3705NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA…
––– ––– 0.010
VGS = 10V, ID = 46A „
––– ––– 0.012 VGS = 5.0V, ID = 46A „
––– ––– 0.018
VGS = 4.0V, ID = 39A „
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
50 ––– ––– S VDS = 25V, ID = 46A…
––– ––– 25
––– ––– 250
µ A VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 98
ID = 46A
––– ––– 19
––– ––– 49
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 13 „…
––– 12 –––
––– 140 –––
––– 37 –––
––– 78 –––
VDD = 28V
ns ID = 46A
RG = 1.8Ω, VGS = 5.0V
RD = 0.59Ω, See Fig. 10 „…
––– 7.5 –––
Between lead,
nH and center of die contact
––– 3600 –––
VGS = 0V
––– 870 ––– pF VDS = 25V
––– 320 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 89†
showing the
A
integral reverse
G
––– ––– 310
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 46A, VGS = 0V „
––– 94 140 ns TJ = 25°C, IF = 46A
––– 290 440 nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width 300µs; duty cycle 2%.
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 320µH
RG = 25, IAS = 46A. (See Figure 12)
ƒ ISD 46A, di/dt 250A/µs, VDD V(BR)DSS,
TJ 175°C
… Uses IRL3705N data and test conditions
† Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]