IRL3705NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.010
VGS = 10V, ID = 46A
––– ––– 0.012 Ω VGS = 5.0V, ID = 46A
––– ––– 0.018
VGS = 4.0V, ID = 39A
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
50 ––– ––– S VDS = 25V, ID = 46A
––– ––– 25
––– ––– 250
µ A VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 98
ID = 46A
––– ––– 19
––– ––– 49
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 13
––– 12 –––
––– 140 –––
––– 37 –––
––– 78 –––
VDD = 28V
ns ID = 46A
RG = 1.8Ω, VGS = 5.0V
RD = 0.59Ω, See Fig. 10
––– 7.5 –––
Between lead,
nH and center of die contact
––– 3600 –––
VGS = 0V
––– 870 ––– pF VDS = 25V
––– 320 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 89
showing the
A
integral reverse
G
––– ––– 310
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 46A, VGS = 0V
––– 94 140 ns TJ = 25°C, IF = 46A
––– 290 440 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 320µH
RG = 25Ω, IAS = 46A. (See Figure 12)
ISD ≤ 46A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Uses IRL3705N data and test conditions
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.