datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

IRFP460B View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
IRFP460B D Series Power MOSFET Vishay
Vishay Semiconductors Vishay
IRFP460B Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
www.vishay.com
IRFP460B, SiHG460B
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
40
0.45
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
VDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective output capacitance, energy
relateda
Effective output capacitance, time
relatedb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
RDS(on)
gfs
Ciss
Coss
Crss
Co(er)
Co(tr)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 10 A
VDS = 50 V, ID = 10 A
500
-
-
0.56
2
-
-
-
-
-
-
-
-
0.2
-
12
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
3094
-
152
-
13
VGS = 0 V,
VDS = 0 V to 400 V
-
131
-
189
-
85
VGS = 10 V
ID = 10 A, VDS = 400 V
-
14
-
28
-
24
VDD = 400 V, ID = 10 A,
VGS = 10 V, Rg = 9.1
-
31
-
117
-
56
f = 1 MHz, open drain
-
1.8
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
-
-
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 10 A, VGS = 0 V
-
-
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 10 A,
dI/dt = 100 A/μs, VR = 20 V
-
437
-
5.9
-
25
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
MAX. UNIT
-
-
4
± 100
1
10
0.25
-
V
V/°C
V
nA
μA
S
-
-
-
pF
-
-
170
-
nC
-
50
62
ns
176
112
-
20
A
80
1.2
V
-
ns
-
μC
-
A
S12-0812-Rev. B, 16-Apr-12
2
Document Number: 91502
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Direct download click here
 

Share Link : Vishay
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]