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IRFP460AS View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP460AS SMPS MOSFET IR
International Rectifier IR
IRFP460AS Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP460AS
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
500 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.61 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.27 VGS = 10V, ID = 12A „
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µA VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
11 ––– ––– S VDS = 50V, ID = 12A
Qg
Total Gate Charge
––– ––– 105
ID = 20A
Qgs
Gate-to-Source Charge
––– ––– 26 nC VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 42
VGS = 10V, See Fig. 6 and 13 „
td(on)
Turn-On Delay Time
––– 18 –––
VDD = 250V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 55 ––– ns ID = 20A
––– 45 –––
RG = 4.3
––– 39 –––
RD = 13, See Fig. 10 „
Ciss
Input Capacitance
––– 3100 –––
VGS = 0V
Coss
Output Capacitance
––– 480 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
––– 18 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
––– 4430 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
––– 130 –––
––– 140 –––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V …
Parameter
EAS
Single Pulse Avalanche Energy‚
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
960
20
28
Units
mJ
A
mJ
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
Typ.
–––
0.24
–––
Max.
0.45
–––
40
Units
°C/W
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 20
A showing the
integral reverse
G
––– ––– 80
p-n junction diode.
S
––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V „
––– 480 710 ns TJ = 25°C, IF = 20A
––– 5.0 7.5 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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