IRFP460A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
500 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.61 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.27 Ω VGS = 10V, ID = 12A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µA VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
11 ––– ––– S VDS = 50V, ID = 12A
––– ––– 105
ID = 20A
––– ––– 26 nC VDS = 400V
––– ––– 42
VGS = 10V, See Fig. 6 and 13
––– 18 –––
VDD = 250V
––– 55 ––– ns ID = 20A
––– 45 –––
RG = 4.3Ω
––– 39 –––
RD = 13Ω,See Fig. 10
––– 3100 –––
VGS = 0V
––– 480 –––
VDS = 25V
––– 18 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 4430 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
––– 130 –––
––– 140 –––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
–––
960
mJ
–––
20
A
–––
28
mJ
Parameter
Typ.
Max.
Units
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
0.24
–––
0.45
–––
°C/W
40
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
MOSFET symbol
D
––– ––– 20
A showing the
integral reverse
G
––– ––– 80
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V
––– 480 710 ns TJ = 25°C, IF = 20A
––– 5.0 7.5 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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