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IRFP26N60LPBF View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
IRFP26N60LPBF Power MOSFET Vishay
Vishay Semiconductors Vishay
IRFP26N60LPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP26N60L, SiHFP26N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
180
61
85
Single
0.21
D
TO-247
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
Available
Lower Gate Charge Results in Simpler Drive
RoHS*
COMPLIANT
Requirements
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Lead (Pb)-free Available
APPLICATIONS
• Zero Voltage Switching (SMPS)
• Telecom and Server Power Supplies
• Uninterruptible Power Suplies
• Motor Control Applications
TO-247
IRFP26N60LPbF
SiHFP26N60L-E3
IRFP26N60L
SiHFP26N60L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.7 mH, RG = 25 Ω, IAS = 26 A, dV/dt = 21 V/ns (see fig. 12).
c. ISD 26 A, dI/dt 480 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91218
S-81264-Rev. B, 21-Jul-08
LIMIT
600
± 30
26
17
100
3.8
570
26
47
470
21
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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