IRFP264NPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

View to exact match

IRFP264NPBF

Power MOSFET

Vishay Semiconductors 

IRFP264N, SiHFP264N

Vishay Siliconix

8000

6000

4000

2000

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

Crss

0

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

ID = 25A

16

12

VDS = 200V

VDS = 125V

VDS = 50V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

40

80

120

160

200

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

1000

100

TJ = 175° C

10

1

TJ = 25° C

0.1

0.2

VGS = 0 V

0.4

0.6

0.8

1.0

1.2

VSD ,Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

1000

100

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100μsec

10

1msec

1

10msec

Tc = 25°C

Tj = 175°C

Single Pulse

0.1

1

10

100

1000 10000

VDS , Drain-toSource Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91216

S-81274-Rev. A, 16-Jun-08

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