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IRFP264NPBF View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
IRFP264NPBF Power MOSFET Vishay
Vishay Semiconductors Vishay
IRFP264NPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Power MOSFET
IRFP264N, SiHFP264N
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
250
VGS = 10 V
210
34
94
Single
0.060
D
TO-247
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well know for, provides the designer
with an ectremely efficient and reliable device for use in a
wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247
IRFP264NPbF
SiHFP264N-E3
IRFP264N
SiHFP264N
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.7 mH, RG = 25 Ω, IAS = 25 A, VGS = 10 V (see fig. 12).
c. ISD 25 A, dI/dt 500 A/µs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
250
± 20
44
31
170
2.6
520
25
38
380
8.7
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91216
S-81274-Rev. A, 16-Jun-08
www.vishay.com
1
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