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IRFP3206PBF View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP3206PBF HEXFET Power MOSFET IR
International Rectifier IR
IRFP3206PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
PD - 97127
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRFP3206PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
60V
2.4m:
3.0m:
ID (Silicon Limited) 200A c
S ID (Package Limited) 120A
D
S
D
G
TO-247AC
G
G ate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy e
IAR
Avalanche Current d
EAR
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case j
RθCS
Case-to-Sink, Flat Greased Surface
RθJA
Junction-to-Ambient j
www.irf.com
Max.
200c
140c
120
840
280
1.9
± 20
5.0
-55 to + 175
300
10lbxin (1.1Nxm)
170
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.24
–––
Max.
0.54
–––
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
3/3/08
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