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IRFP4110PBF View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP4110PBF HEXFET® Power MOSFET IR
International Rectifier IR
IRFP4110PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP4110PbF
1000
100
TJ = 175°C
TJ = 25°C
10
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
180
160
Limited By Package
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20 40 60 80 100 120
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
100µsec
10msec
10
DC
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
125
Id = 5mA
120
115
110
105
100
95
90
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
800
ID
700
TOP 17A
27A
600
BOTTOM 108A
500
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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