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IRFP4110PBF View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP4110PBF HEXFET® Power MOSFET IR
International Rectifier IR
IRFP4110PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP4110PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.108 ––– V/°C Reference to 25°C, ID = 5mAd
––– 3.7 4.5 mVGS = 10V, ID = 75A g
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
160 ––– ––– S VDS = 50V, ID = 75A
––– 150 210 nC ID = 75A
––– 35 –––
VDS = 50V
––– 43 –––
VGS = 10V g
RG
Gate Resistance
––– 1.3 –––
td(on)
Turn-On Delay Time
––– 25 –––
tr
Rise Time
––– 67 –––
td(off)
Turn-Off Delay Time
––– 78 –––
tf
Fall Time
––– 88 –––
Ciss
Input Capacitance
––– 9620 –––
Coss
Output Capacitance
––– 670 –––
Crss
Reverse Transfer Capacitance
––– 250 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related)i ––– 820 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 950 –––
ns VDD = 65V
ID = 75A
RG = 2.6
VGS = 10V g
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V i
VGS = 0V, VDS = 0V to 80V h
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) di
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 170c A MOSFET symbol
D
showing the
––– ––– 670
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 75A, VGS = 0V g
––– 50 75 ns TJ = 25°C
VR = 85V,
––– 60 90
TJ = 125°C
IF = 75A
––– 94 140 nC TJ = 25°C
di/dt = 100A/µs g
––– 140 210
TJ = 125°C
––– 3.5 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 75A, di/dt 630A/µs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 120A. Note that current
… Pulse width 400µs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.033mH
RG = 25, IAS = 108A, VGS =10V. Part not recommended for use
above this value.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
2
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