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IRFP26N60L View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP26N60L SMPS MOSFET IR
International Rectifier IR
IRFP26N60L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRFP26N60L
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.33 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
f Static Drain-to-Source On-Resistance ––– 210 250 mVGS = 10V, ID = 16A
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.0 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
––– ––– 50 µA VDS = 600V, VGS = 0V
––– ––– 2.0 mA VDS = 480V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 30V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -30V
RG
Internal Gate Resistance
––– 0.8 ––– f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.
Coss eff. (ER)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
13 ––– –––
––– ––– 180
––– ––– 61
––– ––– 85
––– 31 –––
––– 110 –––
––– 47 –––
––– 42 –––
––– 5020 –––
––– 450 –––
––– 34 –––
––– 230 –––
––– 170 –––
S VDS = 50V, ID = 16A
ID = 26A
nC VDS = 480V
f VGS = 10V, See Fig. 7 & 15
VDD = 300V
ns ID = 26A
RG = 4.3
f VGS = 10V, See Fig. 11a & 11b
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz, See Fig. 5
g VGS = 0V,VDS = 0V to 480V
(Energy Related)
Avalanche Characteristics
Symbol
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
570
26
47
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
h Parameter
Junction-to-Case
h Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.27
–––
40
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 12)
‚ Starting TJ = 25°C, L = 1.7mH, RG = 25,
IAS = 26A, (See Figure 14a)
ƒ ISD 26A, di/dt 719A/µs, VDD V(BR)DSS,
TJ 150°C.
2
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while VDS is rising from 0 to 80% VDSS.
† Rθ is measured at TJ approximately 90°C
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