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IRFP2907Z View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP2907Z HEXFET® Power MOSFET IR
International Rectifier IR
IRFP2907Z Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRFP2907Z
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
12.0
ID= 90A
10.0
VDS= 60V
VDS= 38V
8.0
VDS= 15V
6.0
4.0
2.0
0.0
0
50
100
150
200
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
TJ = 175°C
100
TJ = 25°C
10
1
0.0
VGS = 0V
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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