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IRFP2907Z View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRFP2907Z
IR
International Rectifier IR
IRFP2907Z Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRFP2907Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75 ––– –––
––– 0.069 –––
––– 3.5 4.5
2.0 ––– 4.0
V VGS = 0V, ID = 250µA
f V/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 90A
V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
180 ––– ––– S VDS = 25V, ID = 90A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 75V, VGS = 0V
––– ––– 250
VDS = 75V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg
Total Gate Charge
––– 180 270
ID = 90A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
46
65
–––
–––
f nC VDS = 60V
VGS = 10V
td(on)
Turn-On Delay Time
––– 19 ––– ns VDD = 38V
tr
Rise Time
––– 140 –––
ID = 90A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 97 –––
––– 100 –––
f RG = 2.5
VGS = 10V
LD
Internal Drain Inductance
––– 5.0 ––– nH Between lead,
D
LS
Internal Source Inductance
6mm (0.25in.)
––– 13 –––
from package
G
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
IS
Continuous Source Current
––– 7500 –––
––– 970 –––
––– 510 –––
––– 3640 –––
––– 650 –––
––– 1020 –––
and center of die contact
S
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Min. Typ. Max. Units
Conditions
––– ––– 90
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
A showing the
––– ––– 680
integral reverse
G
––– ––– 1.3
f p-n junction diode.
S
V TJ = 25°C, IS = 90A, VGS = 0V
––– 41
––– 59
61
89
f ns TJ = 25°C, IF = 90A, VDD = 38V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C,
L=0.13mH, RG = 25, IAS = 90A, VGS =10V.
Part not recommended for use above this value.
ƒ ISD 90A, di/dt 340A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 1.0ms; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population. 100%
tested to this value in production.
ˆ Rθ is measured at TJ of approximately 90°C.
2
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