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IRFP1405 View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP1405 AUTOMOTIVE MOSFET IR
International Rectifier IR
IRFP1405 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRFP1405
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
e V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance ––– 4.2 5.3 mVGS = 10V, ID = 95A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
77 ––– ––– S VDS = 25V, ID = 95A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg
Total Gate Charge
––– 120 180
ID = 95A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
30
53
–––
–––
e nC VDS = 44V
VGS = 10V
td(on)
Turn-On Delay Time
––– 12 –––
VDD = 28V
tr
Rise Time
––– 160 –––
ID = 95A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 140 –––
––– 150 –––
e ns RG = 2.6
VGS = 10V
LD
Internal Drain Inductance
––– 5.0 –––
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
––– 13 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 5600 –––
––– 1310 –––
––– 350 –––
––– 6550 –––
––– 920 –––
––– 1750 –––
and center of die contact
S
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
f VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 95
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– ––– 640
A showing the
integral reverse
––– ––– 1.3
––– 70 110
––– 170 260
e p-n junction diode.
V TJ = 25°C, IS = 95A, VGS = 0V
e ns TJ = 25°C, IF = 95A, VDD = 28V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
„ Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
‚ Limited by TJmax, starting TJ = 25°C, L = 0.12mH … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25, IAS = 95A, VGS =10V. Part not
avalanche performance.
recommended for use above this value.
† This value determined from sample failure population. 100%
ƒ Pulse width 1.0ms; duty cycle 2%.
tested to this value in production.
2
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