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IRFP054N View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP054N HEXFET® Power MOSFET IR
International Rectifier IR
IRFP054N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP054N
D.U.T
+
‚
-

RG
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
-
„
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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