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IRFP044N View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP044N HEXFET® Power MOSFET IR
International Rectifier IR
IRFP044N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP044N
2800
2400
VGS = 0V,
f = 1MHz
C is s = C gs + C gd , Cds SH O RTE D
Crss = C gd
Co ss = Cds + C g d
2000
C is s
1600
1200
C oss
800
C rs s
400
0
A
1
10
100
V D S , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 28A
16
V DS = 44V
V DS = 28V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
10
20
30
40
50
60
Q G , T otal G ate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OP ERA TION IN THIS A REA LIM ITE D
B Y R D S (o n)
100
TJ = 175°C
TJ = 25°C
10
1
VG S = 0V A
0.4
0.8
1.2
1.6
2.0
2.4
V S D , S ource-to-D rain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
10 µs
10 0µ s
10
1m s
TC = 25°C
TJ = 175°C
S in g le Pu lse
1
1
10
10 m s
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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