IRFP450B View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

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IRFP450B

500V N-Channel MOSFET

Fairchild Semiconductor 

November 2001

IRFP450B

500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies,

power factor correction and electronic lamp ballasts based

on half bridge.

Features

• 14A, 500V, RDS(on) = 0.39Ω @VGS = 10 V

• Low gate charge ( typical 87 nC)

• Low Crss ( typical 60 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G!

G DS

TO-3P

IRFP Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VDSS

ID

IDM

VGSS

EAS

IAR

EAR

dv/dt

PD

TJ, TSTG

TL

Parameter

Drain-Source Voltage

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current - Pulsed

(Note 1)

Gate-Source Voltage

Single Pulsed Avalanche Energy

(Note 2)

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

D

!

●

◀▲

●

●

!

S

IRFP450B

500

14

8.8

56

± 30

990

14

20.5

5.5

205

1.64

-55 to +150

300

Thermal Characteristics

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

--

0.61

0.24

--

--

40

Units

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Units

°C/W

°C/W

°C/W

©2001 Fairchild Semiconductor Corporation

Rev. B, November 2001

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