IRFH4253DPBF View Datasheet(PDF) - International Rectifier

Part Name

Description

View to exact match

IRFH4253DPBF

HEXFET® Power MOSFET

International Rectifier 

1000

100

10

Q1 - Control FET

TOP

BOTTOM

VGS

10V

5.0V

4.5V

3.5V

3.1V

2.9V

2.7V

2.5V

1

2.5V

0.1

0.1

60µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

100

TOP

BOTTOM

VGS

10V

5.0V

4.5V

3.5V

3.1V

2.9V

2.7V

2.5V

10

2.5V

1

0.1

1

60µs PULSE WIDTH

Tj = 150°C

10

100

VDS, Drain-to-Source Voltage (V)

Fig 3. Typical Output Characteristics

1000

100

TJ = 150°C

10

TJ = 25°C

1

VDS = 15V

60µs PULSE WIDTH

0.1

1.5

2.0

2.5

3.0

3.5

4.0

VGS, Gate-to-Source Voltage (V)

Fig 5. Typical Transfer Characteristics

4 www.irf.com © 2013 International Rectifier

1000

100

10

IRFH4253DPbF

Q2 - Synchronous FET

TOP

BOTTOM

VGS

10V

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

2.3V

1

2.3V

0.1

0.1

60µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

TOP

BOTTOM

VGS

10V

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

2.3V

10

2.3V

1

0.1

60µs PULSE WIDTH

Tj = 150°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

1000

100 TJ = 150°C

10

TJ = 25°C

1

VDS = 15V

60µs PULSE WIDTH

0.1

1.0

2.0

3.0

4.0

5.0

VGS, Gate-to-Source Voltage (V)

Fig 6. Typical Transfer Characteristics

June 10, 2013

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