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IRFI614G View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRFI614G
Vishay
Vishay Semiconductors Vishay
IRFI614G Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Power MOSFET
IRFI614G, SiHFI614G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
250
VGS = 10 V
2.0
8.2
1.8
4.5
Single
D
TO-220 FULLPAK
G
GDS
S
N-Channel MOSFET
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available
f = 60 Hz)
RoHS*
• Sink to Lead Creepage Distance = 4.8 mm
COMPLIANT
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220 FULLPAK
IRFI614GPbF
SiHFI614G-E3
IRFI614G
SiHFI614G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 22 mH, RG = 25 Ω, IAS = 2.1 A (see fig. 12).
c. ISD 2.7 A, dI/dt 65 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
250
± 20
2.1
1.3
8.4
0.18
61
2.1
2.3
23
2.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91145
S-Pending-Rev. A, 16-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1
 

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