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IRFW730B View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
IRFW730B 400V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
IRFW730B Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
Notes :
1.
2.
IVDG=S =2500Vμ
A
0.8
-100
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
10 µs
101
100 µs
1 ms
10 ms
100
DC
10-1
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 2.75 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
6
5
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
100 D = 0.5
0.2
0.1
1 0 -1
0.05
0.02
0.01
sin gle pu lse
N otes :
1. Zθ
(t)
JC
=
1.71
/W
M ax.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu a re W ave P u lse D u ra tion [se c]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
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