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IRFW634B View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
IRFW634B 250V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
IRFW634B Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
250 --
ID = 250 µA, Referenced to 25°C -- 0.27
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
V
VGS = 10 V, ID = 4.05 A
-- 0.345 0.45
VDS = 40 V, ID = 4.05 A (Note 4) --
7.6
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 780 1000 pF
--
95 125
pF
-- 20
25
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 125 V, ID = 8.1 A,
RG = 25
-- 15
40
ns
--
75 160
ns
-- 100 210
ns
(Note 4, 5)
--
65 140
ns
VDS = 200 V, ID = 8.1 A,
-- 29
38
nC
VGS = 10 V
-- 4.2
--
nC
(Note 4, 5) --
14
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
8.1
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- 32.4
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.1 A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 8.1 A,
-- 170
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
0.91
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.9mH, IAS = 8.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 8.1A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
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