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IRFB3006PBF View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRFB3006PBF
IR
International Rectifier IR
IRFB3006PBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Applications
l High Efficiency Synchronous Rectification
in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free
IRFB3006PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
60V
2.1m:
2.5m:
c 270A
S ID (Package Limited) 195A
D
S
D
G
TO-220AB
G
Gate
D
Drain
S
Source
Base Part Number
IRFB3006PbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB3006PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
e Single Pulse Avalanche Energy
Ãd Avalanche Current
g Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
k Junction-to-Case
RθCS
RθJA
Case-to-Sink, Flat Greased Surface
jk Junction-to-Ambient
Max.
™ 270
™ 190
195
1080
375
2.5
± 20
10
-55 to + 175
300
x x 10lb in (1.1N m)
320
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
0.4
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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April 23, 2014
 

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