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IRFD9010 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRFD9010
Vishay
Vishay Semiconductors Vishay
IRFD9010 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRFD9010, SiHFD9010
Vishay Siliconix
100
TJ = 150 °C
10
1
TJ = 25 °C
0.1
0
1
2
3
4
5
- VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
Operation in this Area Limited
by RDS(on)
10
10 μs
100 μs
1 ms
1
10 ms
0.1
TC = 25 °C
TJ = 150 °C
Single Pulse
0.01
1
10
100 ms
1s
DC
100
- VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
2.0
1.6
1.2
0.8
0.4
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
Rg
RD
D.U.T.
- 10 V
Pulse width 1 µs
Duty factor 0.1 %
-
+VDD
Fig. 10a - Switching Time Test Circuit
VGS
10 %
td(on) tr
td(off) tf
90 %
VDS
Fig. 10b - Switching Time Waveforms
www.vishay.com
4
Document Number: 91405
S10-0998-Rev. A, 26-Apr-10
 

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