IRFD110PBF View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

View to exact match

IRFD110PBF

Power MOSFET

Vishay Semiconductors 

Power MOSFET

IRFD110, SiHFD110

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

Qg (Max.) (nC)

Qgs (nC)

Qgd (nC)

Configuration

100

VGS = 10 V

8.3

2.3

3.8

Single

0.54

D

HVMDIP

S

G

D

G

S

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

• End Stackable

• 175 °C Operating Temperature

• Fast Switching and Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

Available

RoHS*

COMPLIANT

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable

case style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up

to 1 W.

HVMDIP

IRFD110PbF

SiHFD110-E3

IRFD110

SiHFD110

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain Current

TA = 25 °C

VGS at 10 V

ID

TA = 100 °C

Pulsed Drain Currenta

IDM

Linear Derating Factor

Single Pulse Avalanche Energyb

Repetitive Avalanche Currenta

Repetitive Avalanche Energya

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

TA = 25 °C

EAS

IAR

EAR

PD

dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

for 10 s

TJ, Tstg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = 2.0 A (see fig. 12).

c. ISD  5.6 A, dI/dt  75 A/μs, VDD  VDS, TJ  175 °C.

d. 1.6 mm from case.

LIMIT

100

± 20

1.0

0.71

8.0

0.0083

140

1.0

0.13

1.3

5.5

- 55 to + 175

300d

UNIT

V

A

W/°C

mJ

A

mJ

W

V/ns

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91127

S10-2466-Rev. C, 25-Oct-10

www.vishay.com

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