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IRFD110PBF(2008) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRFD110PBF
(Rev.:2008)
Vishay
Vishay Semiconductors Vishay
IRFD110PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
1.0
0.8
0.6
0.4
0.2
0.0
25
91127_09
50
75 100 125 150 175
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFD110, SiHFD110
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width 1 µs
Duty factor 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
103
102 0 0.5
0.2
10 0.1
0.05
0.02
1 0.01
0.1
Single Pulse
(Thermal Response)
10-2
10-5
10-4
10-3
10-2
0.1
1
91127_11
t1, Rectangular Pulse Duration (S)
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10
102
103
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- V DD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91127
S-81263-Rev. A, 21-Jul-08
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
 

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