IRFBC40L View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
View to exact match
IRFBC40L Datasheet PDF : 8 Pages
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IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V; starting TJ = 25 °C, L = 27 mH, RG = 25 Ω, IAS = 6.2 A (see fig. 12).
c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC40/SiHFBC40 data and test conditions.
LIMIT
- 55 to + 150
300d
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mounted, steady-state)a
RthJA
Maximum Junction-to-Case
RthJC
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.0
UNIT
°C
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
ΔVDS/TJ
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.7 Ab
VDS = 100 V, ID = 3.7 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
VGS = 10 V
ID = 6.2 A, VDS = 3600 V,
see fig. 6 and 13b, c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 300 V, ID = 6.2 A,
RG = 9.1 Ω, RD = 47 Ω,VGS = 10 V,
see fig. 10b, c
Internal Source Inductance
LS
Between lead, and center of die contact
MIN.
600
-
2.0
-
-
-
-
4.7
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.70
-
V/°C
-
4.0
V
-
± 100 nA
-
100
µA
-
500
-
1.2
Ω
-
-
S
1300
-
160
-
pF
30
-
-
60
-
8.3
nC
-
30
13
-
18
-
ns
55
-
20
-
7.5
-
nH
www.vishay.com
2
Document Number: 91116
S-Pending-Rev. A, 23-Jun-08
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