datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

IRFBC40STRLPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRFBC40STRLPBF
Vishay
Vishay Semiconductors Vishay
IRFBC40STRLPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
1.2
60
8.3
30
Single
D
I2PAK (TO-262) D2PAK (TO-263)
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface Mount (IRFBC40S/SiHFBC40S)
• Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) Available
• Available
in
Tape
and
Reel
(IRFBC20S,
RoHS*
COMPLIANT
SiHFBC20S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application. The
through-hole version (IRFBC40L/SiHFBC40L) is available
for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free
IRFBC40SPbF
SiHFBC40S-E3
SnPb
IRFBC40S
SiHFBC40S
Note
a. See device orientation.
D2PAK (TO-263)
IRFBC40STRLPbFa
SiHFBC40STL-E3a
IRFBC40STRLa
SiHFBC40STLa
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltagee
Gate-Source Voltagee
Continuous Drain Current
Pulsed Drain Currenta,e
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb, e
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
* Pb containing terminations are not RoHS compliant, exemptions may apply
I2PAK (TO-262)
IRFBC40LPbF
SiHFBC40L-E3
IRFBC40L
SiHFBC40L
LIMIT
600
± 20
6.2
3.9
25
1.0
570
6.2
13
130
3.1
3.0
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
Document Number: 91116
S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]