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IRFBC30SPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRFBC30SPBF
Vishay
Vishay Semiconductors Vishay
IRFBC30SPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
-
Maximum Junction-to-Case (Drain)
RthJC
-
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
For recommended footprint and soldering techniques refer to application note #AN-994.
MAX.
40
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAc
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.2 Ab
VDS = 50 V, ID = 2.2 Ac
600
-
-
V
-
0.62
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
100
µA
-
-
500
-
-
2.2
Ω
2.5
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5c
-
-
VGS = 10 V
ID = 3.6 A, VDS = 360 V,
see fig. 6 and 13b, c
-
-
-
VDD = 300 V, ID = 3.6 A,
-
RG = 12 Ω, RD = 82 Ω, see fig. 10b, c
-
-
Between lead, and center of die contcat
-
660
-
86
-
pF
19
-
-
31
-
4.6
nC
-
17
11
-
13
-
ns
35
-
14
-
7.5
-
nH
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
3.6
A
-
-
14
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb
-
-
1.6
V
trr
-
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/µsb, c
370
810
ns
Qrr
-
2.0
4.2
µC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Uses IRFBC30/SiHFBC30 data and test conditions.
www.vishay.com
2
Document Number: 91111
S-Pending-Rev. A, 10-Jun-08
 

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