IRFBC30LPBF View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
View to exact match
IRFBC30LPBF Datasheet PDF : 8 Pages
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IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
31
4.6
17
Single
2.2
D
I2PAK (TO-262) D2PAK (TO-263)
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface Mount (IRFBC30S, SiHFBC30S)
• Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)
• Available in Tape and Reel (IRFBC30S,
SiHFBC30S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application. The
through-hole version (IRFBC30L, SiHFBC30L) is a available
for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free
IRFBC30SPbF
SiHFBC30S-E3
SnPb
IRFBC30S
SiHFBC30S
Note
a. See device orientation.
D2PAK (TO-263)
IRFBC30STRLPbFa
SiHFBC30STL-E3a
-
-
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
TA = 25 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 41 mH, RG = 25 Ω, IAS = 3.6 A (see fig. 12).
c. ISD ≤ 3.6 A, dI/dt ≤ 60 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC30/SiHFBC30 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
I2PAK (TO-262)
IRFBC30LPbF
SiHFBC30L-E3
IRFBC30L
SiHFBC30L
LIMIT
600
± 20
3.6
2.3
14
0.59
290
3.6
7.4
3.1
74
3.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91111
S-Pending-Rev. A, 10-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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